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Doping method, semiconductor device, the resistance layer, a method of manufacturing a field effect transistor, a method of manufacturing a semiconductor circuit device, manufacturing method of the conductive region, the method of forming a quantum wire, the method of forming the quantum box, quantum wire transistors, semiconductor integrated circuits method of manufacturing, electron wave interference device
Doping method, semiconductor device, the resistance layer, a method of manufacturing a field effect transistor, a method of manufacturing a semiconductor circuit device, manufacturing method of the conductive region, the method of forming a quantum wire, the method of forming the quantum box, quantum wire transistors, semiconductor integrated circuits method of manufacturing, electron wave interference device
PURPOSE:To provide a new doping method in which a doping treatment can be executed easily to a III-V compound semiconductor with good controllability and to provide the manufacturing method of various semiconductor devices by utilizing the doping method. CONSTITUTION:An undoped SiOx film 2 and an SiN film 3 as an As diffusion- preventing film are formed, in this order, on a GaAS substrate 1 as a III-V compound semiconductor. After that, a heat treatment is executed, silicon atoms are diffused into the GaAs substrate 1 from the SiOx film 2, and a doping operation is performed.
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