首页>
外国专利>
The electrode structure which possesses the Bi stratified ferroelectric thin film, the formation manner and ferroelectric thin film memory device
The electrode structure which possesses the Bi stratified ferroelectric thin film, the formation manner and ferroelectric thin film memory device
展开▼
机译：具有Bi分层铁电薄膜的电极结构，形成方法及铁电薄膜存储装置
展开▼
页面导航
摘要
著录项
相似文献
摘要
PROBLEM TO BE SOLVED: To control a Bi laminar ferroelectric thin film formed on an Ir oxide layer in crystalline orientation by a method wherein a Ti silicide layer, an Ir-Ti alloy layer, a Ti layer, and a crystalline Ir oxide layer are successively provided between a metal layer and the Bi laminar ferroelectric thin film in this sequence. SOLUTION: An electrode structure with a Bi laminar dielectric thin film is equipped with an insulating film 12, a polysilicon layer 14, a Ti silicide layer 16, an Ir-Ti alloy layer 18, an Ir layer 20, a crystalline Ir oxide layer 22, and a Bi laminar ferromagnetic thin film 24 which are formed on a semiconductor substrate. The N-type polysilicon layer 14, the Ti silicide layer 16, the Ir-Ti alloy layer 18, the Ir layer 20, and the crystalline Ir oxide layer 22 are successively provided between the metal layer 14 and the Bi laminar ferroelectric thin film 24. An Ir oxide having plane orientations of (200) and (110) is used as the crystalline Ir oxide layer 22. For instance, a BIT thin film is used as the Bi laminar ferroelectric thin film 24.
展开▼
