首页>
外国专利>
Thin layers of type abo3 with excess - a - type and b - type elements and method for production of integrated circuits with the use of these layers
Thin layers of type abo3 with excess - a - type and b - type elements and method for production of integrated circuits with the use of these layers
展开▼
机译:带有过量a型和b型元素的abo3型薄层以及使用这些薄层的集成电路生产方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for fabricating an integrated circuit capacitor (10, 20, 30) having a dielectric layer (15, 26, 37) comprising BST with excess A-site and B-site materials such as barium and titanium added. An organometallic or metallic soap precursor solution is prepared (P42) comprising a stock solution of BST of greater than 99.999 % purity blended with excess A-site and B-site materials such as barium and titanium such that the barium is in the range of 0.01-100 mol %, and such that the titanium is in the range of 0.01-100 mol %. A xylene exchange (P44) is then performed to adjust the viscosity of the solution for spin-on application to a substrate. The precursor solution is spun on a first electrode (P45), dried (P46) at 400 DEG C for 2 to 10 minutes, then annealed (P47) at 650 DEG C to 800 DEG C for about an hour to form a layer of BST with excess titanium. A second electrode is deposited (P48), patterned (P49), and annealed at between 650 DEG C to 800 DEG C for about 30 minutes. The resultant capacitor (10, 20, 30) exhibits an enlarged dielectric constant with little change in leakage current.
展开▼