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Image sensor having nonsymmetric spacer on each side wall of transfer transistor gate electrode and method for forming the same
Image sensor having nonsymmetric spacer on each side wall of transfer transistor gate electrode and method for forming the same
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机译：在转移晶体管栅电极的每个侧壁上具有非对称间隔物的图像传感器及其形成方法
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摘要
BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an image sensor fabrication method and a method for fabricating an image sensor that can prevent a decrease in voltage swing width and to suppress an increase in dark current. The width of the first insulating film spacer formed on one side of the gate electrode and overlapping the photodiode region is greater than the width of the second insulating film spacer formed on the other side of the gate electrode of the transfer transistor and overlapping the floating diffusion region. It is characterized by. In addition, the present invention forms a width of the first insulating film spacer formed on one side of the gate electrode of the transfer transistor and overlapping the photodiode region by using an oxide film formation method using a thermal oxidation or chemical vapor deposition process, the gate of the transfer transistor The width of the second insulating layer spacer formed on the other side of the electrode and overlapping the floating diffusion region is smaller.
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