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Image sensor having nonsymmetric spacer on each side wall of transfer transistor gate electrode and method for forming the same
Image sensor having nonsymmetric spacer on each side wall of transfer transistor gate electrode and method for forming the same
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机译：在转移晶体管栅电极的每个侧壁上具有非对称间隔物的图像传感器及其形成方法
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摘要
PURPOSE: An image sensor having an asymmetrical insulation layer spacer on the sidewall of a transfer transistor gate is provided to guarantee uniform capacitance in a photodiode region and to control dark current, by forming the first insulation layer spacer of a relatively broad width on a side surface of the transfer transistor gate which transfers optical charges in a photodiode to a signal process region such that the first insulation layer spacer overlaps the photodiode region. CONSTITUTION: An optical sensing unit is formed on a semiconductor substrate(30). A gate electrode(33) of a transfer transistor separated from the optical sensing unit is formed. A floating diffusion region(38) is formed in the semiconductor substrate at one end of the gate electrode. The first insulation layer spacer is formed on one side surface of the gate electrode, and a part of the first insulation layer spacer overlaps a part of the optical sensing unit. The second insulation layer spacer of which the width is smaller than that of the first insulation layer spacer is formed on the other side surface of the gate electrode, and a part of the second insulation layer spacer overlaps a part of the floating diffusion region.
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