Sidewall formation for sidewall patterning of sub 100 nm structures

• 1. 采用用于四倍半节距凸起图案化的两次侧壁图案化形成存储器线和结构的设备和方法 [P] . 中国专利： CN102714142B . 2015.08.12
• 2. 采用用于四倍半节距凸起图案化的两次侧壁图案化形成存储器线和结构的设备和方法 [P] . 中国专利： CN102714142A . 2012-10-03
• 3. Simplified sidewall formation for sidewall patterning of sub 100 nm structures [P] . 美国专利： US6214737B1 . 2001-04-10

  机译： 用于亚100 nm结构侧壁图案化的简化侧壁形成

• 4. Sidewall formation for sidewall patterning of sub 100 nm structures [P] . 美国专利： US6291137B1 . 2001-09-18

  机译： 用于亚100 nm结构侧壁图案化的侧壁形成

• 5. Sidewall patterning for sub 100 nm gate conductors [P] . 美国专利： US6391525B1 . 2002-05-21

  机译： 100 nm以下栅极导体的侧壁图案

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• 8. Elimination of Mesa-Sidewall Gate Leakage in InAlAs/InGaAs Heterostructures bySelective Sidewall Recessing [R] . Bahl, S. R., del Alamo, J. A. 1992

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