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SEMICONDUCTOR DEVICE AND GUARD RING LAYOUT METHOD TO OPTIMIZE LATCH-UP PREVENTING EFFECT

机译:半导体器件和保护环布局方法,可优化闩锁预防效果

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device as well as its layout method where the performance (amplification factor) of a parasitic element is halved than before by optimizing the layout method for a guard ring.;SOLUTION: The activation/deactivation of a parasitic element is intentionally controlled by 'concentrating', 'excluding', 'selecting' VSS substrate contact. Since the parasitic element is activated at a part where the VSS substrate contact is 'concentrated', an excessive current is sucked up by inserting an epi-contract/well-contact into the part. The substrate contact is 'excluded' as possible in a circuit region where the parasitic element is wanted to be deactivated. These regions are intentionally 'selected' on an actual chip. By multiplexing a guard ring, the effect will be two to three times.;COPYRIGHT: (C)2002,JPO
机译:要解决的问题:提供一种半导体器件及其布局方法,通过优化保护环的布局方法,使寄生元件的性能(放大系数)比以前减少一半;解决方案:激活/停用通过“集中”,“排除”,“选择” VSS基板接触有意控制寄生元件。由于寄生元件在VSS基板触点被“集中”的部分被激活,因此,通过将Epi-Contract / well-contact插入到该部分中,会吸收过多的电流。希望在希望禁用寄生元件的电路区域中“排除”基板触点。这些区域是在实际芯片上有意“选择”的。通过复用保护环,效果将是原来的两到三倍。; COPYRIGHT:(C)2002,JPO

著录项

  • 公开/公告号JP2002057284A

    专利类型

  • 公开/公告日2002-02-22

    原文格式PDF

  • 申请/专利权人 MOTOROLA INC;

    申请/专利号JP20000236037

  • 发明设计人 FUKAZAWA HIDEKI;

    申请日2000-08-03

  • 分类号H01L27/04;H01L21/822;

  • 国家 JP

  • 入库时间 2022-08-22 00:56:07

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