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For sub-quarter micron application, preliminary cleaning method prior to metallization
For sub-quarter micron application, preliminary cleaning method prior to metallization
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机译：对于亚四分之一微米的应用，金属化之前的初步清洁方法
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摘要
(57) In general, for sub-micron structures on a semiconductor substrate, [summary] The present invention also provides a preliminary cleaning prior to metallization. The method comprising of cleaning the submicron features with radicals from a plasma of the reactive gas such as a mixture of He / NF 3 or a mixture of oxygen and CF 4 / O 2, this plasma, the method is preferably It is generated by a remote plasma source, the radical is supplied to the chamber in which the substrate is placed. Preferably, native oxide remaining in the submicron structure are reduced by radicals from a plasma containing hydrogen in a second step. Following the washing step or both of the first, the structure can be filled with metal by available metallization techniques. Typically, this may involve prior to deposition of aluminum, copper or tungsten, depositing a barrier / liner layer on the dielectric surface that is exposed. Metallization process and the pre-washing can be done with available integrated processing platform.
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