首页> 外国专利> CONTAMINATION EVALUATING METHOD ON SUBSTRATE SURFACE, CONTAMINATION EVALUATING DEVICE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

CONTAMINATION EVALUATING METHOD ON SUBSTRATE SURFACE, CONTAMINATION EVALUATING DEVICE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

机译:基板表面的污染评估方法,污染评估装置以及半导体装置的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a method for evaluating contamination by a molecular or cluster chemical substance adsorbed on the surface of a desirable region without damaging a semiconductor substrate having a complicated shape and the surface constituted with plural kinds of materials, and provide a device for evaluation and a manufacturing method for a semiconductor device based on contamination evaluation.;SOLUTION: Electron beams 102 irradiate the surface of a substrate 101, and substrate current induced in the substrate 101 and flowing to a ground 110 is measured with an electrode 108 and an ampere meter 109. The contamination of the substrate under measurement is evaluated based on the difference between values of substrate current produced by the irradiation of the electron beams 102 in each measuring substrate of an evaluation target. Contamination evaluation is executed to the semiconductor substrate on the way of manufacturing in the manufacturing line of the semiconductor device, and if the substrate current value does not satisfy a condition specified by a proceeding step working process, an optimum cleaning process purposing the removal of the adsorbed substances on the substrate surface is applied.;COPYRIGHT: (C)2002,JPO
机译:解决的问题:提供一种在不损害具有复杂形状的半导体基板以及由多种材料构成的表面的情况下,评估吸附在期望区域的表面上的分子或簇化学物质的污染的方法,并且提供一种装置;解决方案:电子束102照射基板101的表面,并用电极108和108测量在基板101中感应并流向地面110的基板电流。在安培计109中。基于评估对象的每个测量基板中电子束102的照射所产生的基板电流的值之间的差,来评估被测基板的污染。在半导体装置的生产线中的制造途中,对半导体基板进行污染评价,如果基板电流值不满足进行工序的工序所规定的条件,则需要去除基板的最佳清洗工序。吸附在基材表面上的物质。;版权所有:(C)2002,日本特许厅

著录项

  • 公开/公告号JP2002257765A

    专利类型

  • 公开/公告日2002-09-11

    原文格式PDF

  • 申请/专利权人 NEC CORP;

    申请/专利号JP20010058075

  • 申请日2001-03-02

  • 分类号G01N27/00;G01R1/06;G01R31/302;H01L21/304;H01L21/66;

  • 国家 JP

  • 入库时间 2022-08-22 01:01:47

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号