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Polishing pad for use in the chemical/mechanical polishing of a semiconductor substrate and method of polishing the substrate using the pad
Polishing pad for use in the chemical/mechanical polishing of a semiconductor substrate and method of polishing the substrate using the pad
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机译：用于半导体衬底的化学/机械抛光的抛光垫以及使用该抛光垫抛光衬底的方法
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摘要
A polishing pad used for the chemical mechanical polishing (CMP) of a semiconductor substrate includes a polishing surface having at least first and second discrete polishing regions effecting differing amounts of polishing. Each polishing region includes at least one opening which holds the slurry that effects the chemical polishing of the substrate, and a contact surface left around the at least one opening which effects the mechanical polishing. The second polishing region has a ratio of the volume of the openings thereof with respect to unit area of the region which is different from the ratio of the volume of the openings of the first polishing region with respect to unit area of the first polishing region. When it is determined that a surface of a semiconductor substrate will become more or less polished at an outer peripheral region thereof than at its central portion as the entirety of the surface is being polished by the first polishing region of the polishing pad, a wafer carrier moves the substrate until the outer peripheral portion of the surface of the substrate lies against the second polishing region of the polishing pad, such that the surface can be polished uniformly.
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