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Polishing pad structure and composition and method of fabricating a polishing pad for chemical-mechanical polishing and method of polishing a semiconductor substrate surface
Polishing pad structure and composition and method of fabricating a polishing pad for chemical-mechanical polishing and method of polishing a semiconductor substrate surface
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机译：用于化学机械抛光的抛光垫结构和组成以及制造抛光垫的方法和抛光半导体衬底表面的方法
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摘要
A polishing pad (200) useful for polishing a semiconductor-comprising substrate is disclosed. The polishing pad is constructed to include conduits which pass through at least a portion of and preferably through the entire thickness (202) of the polishing pad. The conduits, preferably tubulars (210), are constructed from a first material which is different from a second material used as a support matrix (220). The conduits are positioned within the support matrix such that the longitudinal centerline of the conduit forms an angle ranging from about 60° to about 120° with the working surface (216) of the polishing pad. In the most preferred embodiment of the present invention, the conduits pass all the way through the thickness of the polishing pad and are sized to permit the flow of polishing slurry, reactive etchant material, heat transfer medium, and/or lubricant (218) from a supply device through the conduits to the working surface of the polishing pad (at least a portion of which is in contact or near contact with the article to be polished). There is also disclosed a method of fabricating a polishing pad useful in chemical-mechanical polishing. Furthermore, a method of polishing a semiconductor-comprising substrate surface is disclosed.
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