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Progress of Forming Ultrathin Gate Oxide using Trideuterium nitrate
Progress of Forming Ultrathin Gate Oxide using Trideuterium nitrate
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机译：硝酸氘形成超薄栅氧化物的研究进展。
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摘要
The present invention relates to a process of forming the ultra-thin insulating film for a semiconductor device using the ND 3 gas.; The present invention is 1-100 seconds in a temperature range of 5-100 minutes or heat treatment while at a temperature of 800 ℃ ~1100 ℃ 600 ℃ ~1000 ℃ at normal pressure or low pressure by using the ND 3 gas as the nitrogen source and then forming an insulating film on a silicon wafer, a rapid thermal processing or subjected to low pressure, the nitrogen doping on the insulating film by the plasma treatment for 5 to 100 minutes at a temperature not higher than 600 ℃. It may also adjust the amount of nitrogen to be added to the insulating film by using a deuterium (D 2) at the same time as the ND 3 gas.; An object of the present invention is by using a ND 3 gas to the NH 3 instead of that used in conventional nitrogen doping gas to form an ultra-thin insulating film for a semiconductor device the electron trapping (trapping) due to problems of residual hydrogen in conventional NH 3 process resolution and is to improve the device characteristics and reliability of the nitrogen of the optimum concentration.
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