首页> 外国专利> Transient current generation method, transient current generation circuit, semiconductor integrated circuit and logic circuit

Transient current generation method, transient current generation circuit, semiconductor integrated circuit and logic circuit

机译:瞬态电流产生方法,瞬态电流产生电路,半导体集成电路和逻辑电路

摘要

A transient current producing method, a transient producing circuit, a related semiconductor integrated circuit and logical circuit are provided, which are capable of preventing a flow of a steady state current, consuming little power and switching at high speed. A transient current occurring at a time of switching of a CMOS circuit is amplified to a predetermined value. This amplification prevents the flow of the steady state current in the circuit. The transient current occurring at the time of switching of the CMOS circuit is converted to a transient voltage. The conversion of the transient current to the transient voltage having a predetermined value and the amplification of the transient current allow a simple configuration of the circuit. The transient current is a feedthrough current which flows from a terminal of a power supply to a ground at the time of switching of the CMOS circuit. The transient current can be a transient current which flows from the power supply to an output terminal of the CMOS circuit at the time of switching of the CMOS circuit and also can be a transient current which flows from the output terminal to the ground.
机译:提供了一种瞬态电流产生方法,瞬态产生电路,相关的半导体集成电路和逻辑电路,其能够防止稳态电流的流动,消耗很少的功率并且能够高速开关。 CMOS电路切换时发生的瞬态电流被放大到预定值。该放大防止了稳态电流在电路中的流动。 CMOS电路切换时发生的瞬态电流被转换为瞬态电压。瞬态电流到具有预定值的瞬态电压的转换以及瞬态电流的放大允许电路的简单配置。瞬态电流是在CMOS电路切换时从电源端子流到地的馈通电流。瞬态电流可以是在CMOS电路切换时从电源流到CMOS电路的输出端子的瞬态电流,也可以是从输出端子流到地的瞬态电流。

著录项

  • 公开/公告号JP3216126B2

    专利类型

  • 公开/公告日2001-10-09

    原文格式PDF

  • 申请/专利权人 日本電気株式会社;

    申请/专利号JP19990022764

  • 发明设计人 渡会 誠一;

    申请日1999-01-29

  • 分类号H03K17/04;H03K19/08;

  • 国家 JP

  • 入库时间 2022-08-22 01:34:58

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