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And a method of manufacturing the same reaction-sintered Si-impregnated porous SiC for semiconductor manufacturing heat treatment jig
And a method of manufacturing the same reaction-sintered Si-impregnated porous SiC for semiconductor manufacturing heat treatment jig
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机译：以及用于半导体制造热处理夹具的相同反应烧结的含硅多孔SiC的制造方法
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摘要
PURPOSE: To obtain the subject heat-treating jig having high purity and high reliability by constituting a region from the surface of a jig to a part in the direction of fixed depth substantially composed only of SiC. ;CONSTITUTION: A material comprises Si-SiC complex containing SiC particles having at least ≥50μm particle diameter. A region from the surface of the material to 3-200μm in the direction of depth is composed of the SiC particles and SiC polycrystal which is obtained by making Si into SiC and has 3-200μm particle diameter. The material contains 25-75wt.% of SiC particles having 50-200μm particle diameter. The region from the surface of the material to 3-200μm in the direction of depth is constituted of a substantial SiC component detecting neither free silicon nor free carbon by a very small range X-ray diffraction method. The complex of Si and SiC shown by the figure comprises large particles 2 of SiC having ≥50μm particle diameter, very small particles 3 of SiC and impregnated silicon 4. A polycrystalline layer 5 of SiC made by reaction between the impregnated silicon and a CO gas is formed from the surface of the sintered material to 3-200μm in the direction of depth.;COPYRIGHT: (C)1996,JPO
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