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Unit for implantation of oxygen ions into silicon wafer has wafer support connected to rotating body and supporting wafer with spacing between ion-implanted surface of wafer and support
Unit for implantation of oxygen ions into silicon wafer has wafer support connected to rotating body and supporting wafer with spacing between ion-implanted surface of wafer and support
Ion implantation unit comprises ion source (10) for production of an ion beam (28), treatment chamber (14) containing silicon wafer (30), rotating body located and rotated in the treatment chamber, wafer support connected to rotating body and supporting the wafer with a spacing between an ion-implanted surface of the wafer and the support, and wafer heating device. The support contacts a part of a region on the external peripheral side of the wafer and clamps the silicon wafer to prevent its displacement in the direction of action of a centrifugal force. Independent claims are given for ion implantation units.
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