首页> 外国专利> TDDB TEST PATTERN AND TDDB TEST METHOD OF DIELECTRIC FILM OF MOS CAPACITOR USING TDDB TEST PATTERN

TDDB TEST PATTERN AND TDDB TEST METHOD OF DIELECTRIC FILM OF MOS CAPACITOR USING TDDB TEST PATTERN

机译:TDDB测试图和MOS电容器介电膜的TDDB测试图及TDDB测试方法

摘要

PURPOSE: An apparatus is provided to reduce the time required for test and a cost for measurement and acquire more number of test data for a constant time so that it can increase the precision of the measurement. CONSTITUTION: The apparatus comprises a plurality of unit test pattern cell, a first voltage supply unit, an ampere meter(15), a voltage forcing node, a drain current measuring node and a second voltage supply unit. A plurality of unit test pattern cell comprises a MOS-capacitor, a MOS-transistor and a fuse for controlling the operation of the MOS-capacitor and the MOS-transistor. The first voltage supply unit supplies a stress voltage to MOS-capacitor and MOS-transistor of a plurality of unit test pattern cell at the same time. The ampere meter continuously measures the change of the total drain current of MOS-transistor which is an element of a plurality of unit test pattern cell. The voltage forcing node is located between the first voltage supply unit and the fuse of each unit test pattern cell. The drain current measuring node is located between the ampere meter and the drain of the MOS-transistor of a plurality of unit test pattern cell. The second voltage supply unit supplies the voltage to the drain of the MOS-transistor of a plurality of unit test pattern cell.
机译:目的:提供一种设备,以减少测试所需的时间和测量成本,并在恒定时间内获取更多数量的测试数据,从而可以提高测量精度。组成:该装置包括多个单元测试图案单元,第一电压提供单元,安培计(15),强制电压节点,漏极电流测量节点和第二电压提供单元。多个单元测试图案单元包括MOS电容器,MOS晶体管和用于控制MOS电容器和MOS晶体管的操作的熔丝。第一电压提供单元同时向多个单元测试图案单元的MOS电容器和MOS晶体管提供应力电压。安培计连续测量作为多个单元测试图案单元的元件的MOS晶体管的总漏极电流的变化。电压强制节点位于第一电压供应单元和每个单元测试图案单元的保险丝之间。漏极电流测量节点位于安培表和多个单元测试图案单元的MOS晶体管的漏极之间。第二电压提供单元将电压提供给多个单元测试图案单元的MOS晶体管的漏极。

著录项

  • 公开/公告号KR20000016823A

    专利类型

  • 公开/公告日2000-03-25

    原文格式PDF

  • 申请/专利权人 HYUNDAI MICRO ELECTRONICS CO. LTD.;

    申请/专利号KR19990000568

  • 发明设计人 KIM HA-JUNG;

    申请日1999-01-12

  • 分类号H01L21/66;

  • 国家 KR

  • 入库时间 2022-08-22 01:46:00

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