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DEVICE AND METHOD FOR TREATING CHARGE BEAM AND FAILURE ANALYSIS METHOD OF SEMICONDUCTOR AND/OR IN-VACUUM EVALUATION DEVICE OF SAMPLE

机译：样品的电荷束处理装置和方法以及半导体和/或真空评估装置的失效分析方法

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摘要

PROBLEM TO BE SOLVED: To obtain reliable fail analysis by detecting the treatment position and depth of a local process by a charge beam, when a charge beam process is made from the single side of a sample such as a semiconductor device. ;SOLUTION: Onto a stage 6, provided in a sample chamber 5 that is retained to be in a vacuum by a vacuum exhaust device, a sample 7 which is formed by a semiconductor device or the like is mounted. Then, an ion beam 3 is mounted on the stage 6 by an ion optical system for scanning the positioned sample 7, and observation, machining, and a deposition gas work together to form a film. At this time, when the ion beam 3 is applied to the sample 7, a secondary charge particle is discharged from the sample 7 for detecting by a charge particle detector 8, and the signal is amplified for inputting to a computer 200. The computer 200 performs observation and machining positioning, based on the coordinates system of the stage 6, the scan signal of the ion beam 3, and the secondary charge particle signal.;COPYRIGHT: (C)2000,JPO

机译：要解决的问题：当从样品（例如半导体器件）的单面进行电荷束处理时，通过检测电荷束局部处理的处理位置和深度来获得可靠的故障分析。解决方案：在载物台6上，载物台6安装在由真空排气装置保持在真空中的样品室5中，该载物台7由半导体装置等形成。然后，通过离子光学系统将离子束3安装在平台6上，以扫描所定位的样品7，并且观察，加工和沉积气体共同作用以形成膜。此时，当将离子束3施加到样品7上时，二次电荷颗粒从样品7中排出以通过电荷颗粒检测器8进行检测，并且信号被放大以输入到计算机200。计算机200基于平台6的坐标系，离子束3的扫描信号和二次电荷粒子信号进行观察和加工定位.COPYRIGHT：（C）2000，JPO

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公开/公告号JP2000299361A

专利类型
公开/公告日2000-10-24

原文格式PDF
申请/专利权人 HITACHI LTD;
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申请/专利号JP19990108880
发明设计人 NISHIMURA NORIMASA;SONOBE YASUO;HAMAMURA YUICHI;SHIMASE AKIRA;AZUMA JUNZO;MIZUMURA MICHINOBU;KOIKE HIDEMI;
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申请日1999-04-16
分类号H01L21/66;G01N21/956;H01J37/28;H01J37/30;
国家 JP
入库时间 2022-08-22 02:02:08

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