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The torsional vibration detection device and torsional vibration detection manner of the silicon monocrystal and production manner null of the monocrystal which uses

机译:硅单晶的扭转振动检测装置及扭转振动检测方式及使用的单晶的制造方式无效

摘要

PROBLEM TO BE SOLVED: To provide the production method of silicon single crystal which prevents polycrystallization of single crystal and breakage and fall from a neck part. ;SOLUTION: This detector is provided with a camera 3 disposed in the outside of a silicon single crystal growth chamber and for detecting rotation of a crystal in the chamber, a memory 22 for processing a signal from the camera 3 and storing it, and an operation processor 21 for comparing the signal from the camera 3 with another signal of the memory 22 and discriminating production of abnormal oscillation of a single crystal 6. In addition, in a method for detecting the abnormal oscillation of a silicon single crystal, it is judged that the abnormal oscillation is produced in the single crystal when a deviation between a time interval of a signal newly output from the detector and its average value exceeds a specified value. The discrimination signal of the abnormal oscillation obtained from the above-mentioned value is input to a silicon rotation driver 12, and its revolving speed is changed, so that the abnormal oscillation can be avoided.;COPYRIGHT: (C)1997,JPO
机译:要解决的问题:提供一种硅单晶的制造方法,该方法可以防止单晶的多晶化以及从颈部破裂和掉落。 ;解决方案:此检测器配备有一个摄像头3,该摄像头3设置在硅单晶生长腔的外部,用于检测腔室内晶体的旋转;存储器22用于处理来自摄像头3的信号并将其存储,操作处理器21,用于将来自照相机3的信号与存储器22的另一个信号进行比较,并判断单晶6异常振荡的产生。此外,在检测硅单晶异常振荡的方法中,进行判断当从检测器新输出的信号的时间间隔与其平均值之间的偏差超过规定值时,在单晶中产生异常振荡。由上述值获得的异常振动的判别信号被输入到硅旋转驱动器12,并且其旋转速度被改变,从而可以避免异常振动。;版权所有:(C)1997,JPO

著录项

  • 公开/公告号JP3099724B2

    专利类型

  • 公开/公告日2000-10-16

    原文格式PDF

  • 申请/专利权人 住友金属工業株式会社;

    申请/专利号JP19960059770

  • 发明设计人 櫻田 晋一;

    申请日1996-03-15

  • 分类号C30B15/26;C30B29/06;

  • 国家 JP

  • 入库时间 2022-08-22 02:06:15

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