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Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of NH.sub.3 or SF.sub.6 and HBR and N. sub.2
Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of NH.sub.3 or SF.sub.6 and HBR and N. sub.2
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机译：使用NH3或SF6和HBR和N.sub.2的混合物在硅或氧化硅存在下进行选择性氮化硅蚀刻
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摘要
An RIE method and apparatus provides uniform and selective etching through silicon nitride material of a supplied workpiece such as a silicon wafer having silicon oxide adjacent to the SiN. A plasma- maintaining gas that includes N.sub.2 having an inflow rate of at least 10 sccm is used to provide etch-depth uniformity across the workpiece. The plasma-maintaining gas further includes HBr and one or both of NF. sub.3 and SF.sub.6.
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