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Plasma Etching of Silicon Nitride with High Selectivity over Silicon Oxide and Silicon in Fluorine Containing Plasmas

机译：含有高选择性的氮化硅氮化硅的等离子体蚀刻，含氟含硅等离子体中的含硅

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Silicon nitride (Si_3N_4) is widely used in microfabrication processes as a dielectric and mask material.In CMOS technology,removal of Si_3N_4 film is a critical step as it represents a possible source of device damages.Possible overetch in the nitride processing may result in damages of a thin oxide and an underlying Si substrate through imperfections of the oxide.

机译：氮化硅（Si_3N_4）广泛用于微制造工艺作为电介质和掩模材料。在CMOS技术中，除去Si_3N_4膜是一种关键步骤，因为它代表了设备损坏的可能源。氮化物处理中的污渍可能导致损坏通过氧化物的缺陷氧化物和底层Si衬底。

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《Meeting of the Electrochemical Society》|2002年||共1页
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C.Reyes-Betanzo; S.A.Moshkalyov; M.A.Cotta; M.A. Pavanello; A.C.S.Ramos; J.W.Swart;
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中图分类化学工业;
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1. Fluorine-free high-resolution selective plasma etching of silicon-oxide layers on silicon substrates [J] . Abdolahad M., Nilchi J.N., Mohajerzadeh S. Journal of Physics, D. Applied Physics: A Europhysics Journal . 2010,第39期

机译：硅衬底上的氧化硅层的无氟高分辨率选择性等离子体刻蚀
2. Eliminating dependence of hole depth on aspect ratio by forming ammonium bromide during plasma etching of deep holes in silicon nitride and silicon dioxide [J] . Iwase Taku, Yokogawa Kenetsu, Mori Masahito Japanese journal of applied physics . 2018,第6S2期

机译：通过在氮化硅和二氧化硅的深孔进行等离子刻蚀过程中形成溴化铵，消除了孔深对长宽比的依赖性
3. Simultaneous In situ Measurement of Silicon Substrate Temperature and Silicon Dioxide Film Thickness during Plasma Etching of Silicon Dioxide Using Low-Coherence Interferometry [J] . Chishio Koshimizu, Takayuki Ohta, Tatsuo Matsudo, Japanese journal of applied physics . 2012,第4Issue1期

机译：使用低相干干涉法同时原位测量二氧化硅等离子体刻蚀过程中的硅衬底温度和二氧化硅膜厚度
4. Plasma Etching of Silicon Nitride with High Selectivity over Silicon Oxide and Silicon in Fluorine Containing Plasmas [C] . C.Reyes-Betanzo, S.A.Moshkalyov, M.A.Cotta, Meeting of the Electrochemical Society . 2002

机译：含有高选择性的氮化硅氮化硅的等离子体蚀刻，含氟含硅等离子体中的含硅
5. Studies of the effects of fluorocarbon deposition and etching on silicon and silicon dioxide etching processes using methyl trifluoride in an inductively coupled plasma reactor, and the development of a reactive ion beam system for the study of plasma-surface interaction mechanisms. [D] . Rueger, Neal R. 1998

机译：在感应耦合等离子体反应器中研究碳氟化合物沉积和蚀刻对硅和二氧化硅蚀刻工艺的影响（使用三氟化甲基），并开发了用于研究等离子体与表面相互作用机理的反应离子束系统。
6. Silicon Oxide Etching Process of NF3 and F3NO Plasmas with a Residual Gas Analyzer [O] . Woo-Jae Kim, In-Young Bang, Ji-Hwan Kim, 2021

机译：NF3和F3No等离子体的氧化硅蚀刻方法具有残余气体分析仪
7. HIGH-QUALITY SURFACE PASSIVATION OBTAINED BY HIGH-RATE DEPOSITED SILICON NITRIDE, SILICON DIOXIDE AND AMORPHOUS SILICON USING THE VERSATILE EXPANDING THERMAL PLASMA TECHNIQUE [O] . 2016

机译：利用多功能扩展热等离子体技术获得高质量沉积的氮化硅，二氧化硅和非晶硅获得的高质量表面钝化

Plasma Etching of Silicon Nitride with High Selectivity over Silicon Oxide and Silicon in Fluorine Containing Plasmas

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