首页>
外国专利>
METHOD FOR CHECKING LAYERS OF POROUS SILICON ON SINGLE-CRYSTALLINE SILICON FOR UNIFORMITY
METHOD FOR CHECKING LAYERS OF POROUS SILICON ON SINGLE-CRYSTALLINE SILICON FOR UNIFORMITY
展开▼
机译：单晶硅上均匀性检查多孔硅层的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
FIELD: nondestructive detection of nonuniformity of pore distribution in porous silicon layers. SUBSTANCE: porous surface is irradiated with light and intensity of reflected beam from different sections is recorded; intensity of reflected light is measured and then structure is elastically deformed by bending so that porous structure becomes convex. Intensity of reflected light is measured again and degree of uniformity of porous silicon layer is detected by variations in light intensity measured before and after deformation. EFFECT: improved sensitivity of procedure in checking porous silicon layer for uniformity of pore distribution. 1 ex
展开▼
