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SILICON OXIDE PROBE FOR REAL-TIME MONITORING/CONTROL OF OXYGEN IN CZOCHRALSKI GROWTH OF SINGLE CRYSTAL SILICON
SILICON OXIDE PROBE FOR REAL-TIME MONITORING/CONTROL OF OXYGEN IN CZOCHRALSKI GROWTH OF SINGLE CRYSTAL SILICON
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机译：氧化硅探针用于单晶硅的直晶生长中氧的实时监测/控制
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摘要
PROBLEM TO BE SOLVED: To provide a system and method for measuring and controlling in a real-time fashion the oxygen content of a single crystal silicon ingot grown from a melt through Czochralski process. SOLUTION: A method for virtually real-time quantification of silicon oxide (SiO) volatilized from a pool of molten silicon such as Czochralski silicon melt and existing in the atmosphere covering the melt. One preferable method comprises that a gas sample containing SiO 54 extracted from the atmosphere covering molten silicon 52 is reacted with a reactant to form a detectable reaction product, which is then quantified, and the result is related to the amount of the SiO 54 existing in the above atmosphere. The SiO measurement is used for monitoring and/or controlling the oxygen content of the molten silicon 52 or that of a piece of single crystal silicon 55 extracted from the molten silicon 52. This invention also relates to a SiO reactional probe 10 and a system for oxygen monitoring and/or control using the probe.
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