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read off for EPROM memory cells with an operating field, independent of threshold jumps of programmed cells in relation to non-programmed cells

机译：读取具有操作场的EPROM存储单元，与已编程单元相对于未编程单元的阈值跳变无关

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摘要

The device comprises a source bias generator (4) suitable for conferring upon the EPROM cell (2) during the reading step a source voltage that varies linearly with the power supply voltage so as to keep constant the voltage between gate and source of the above cell (2). IMAGE

机译：该装置包括一个源极偏置发生器（4），适合于在读取步骤中赋予EPROM单元（2）一个随电源电压线性变化的源电压，以保持上述单元的栅极和源极之间的电压恒定。（2）。 <图像>

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公开/公告号DE69126245D1

专利类型
公开/公告日1997-07-03

原文格式PDF
申请/专利权人 SGS-THOMSON MICROELECTRONICS S.R.L. AGRATE BRIANZA MAILAND/MILANO IT;
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申请/专利号DE19916026245T
发明设计人 DALLABORA MARCO I-20017 RHO(MILANO) IT;ROLANDI PAOLO I-15059 VOLPEDO (ALESSANDRIA) IT;MACCALLI MARCO I-20026 NOVATE MILANESE (MILANO) IT;
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申请日1991-06-27
分类号G11C16/06;
国家 DE
入库时间 2022-08-22 03:13:17

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