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Self-aligned amorphous silicon thin film transistor using microcrystalline silicon containing chlorine and its manufacturing method

机译:使用含氯微晶硅的自对准非晶硅薄膜晶体管及其制造方法

摘要

The present invention relates to an amorphous silicon TFT and a method of manufacturing the same, by forming a μc-Si (: Cl) using a mixed gas containing Cl as the ohmic contact layer, the leakage current is small in the backlight irradiation in the TFT-LCD Not only can TFT be made, but also by adjusting the mixing ratio of SiH 2 Cl 2 gas, selective deposition can be achieved, which can reduce the etching process when manufacturing self-aligned TFT, thereby improving process yield and productivity. Fully self-aligned amorphous silicon TFTs with n + μc-Si (: Cl) are particularly suitable for large area TFT-LCD fabrication.
机译:非晶硅TFT及其制造方法技术领域本发明涉及非晶硅TFT及其制造方法,通过使用包含Cl的混合气体作为欧姆接触层形成μc-Si(:Cl),在背光照射中漏电流小。 TFT-LCD不仅可以制造TFT,而且可以通过调节SiH 2 Cl 2 气体的混合比例来实现选择性沉积,从而可以减少蚀刻工艺当制造自对准TFT时,从而提高了工艺产量和生产率。 n + μc-Si(:Cl)的完全自对准非晶硅TFT特别适用于大面积TFT-LCD制造。

著录项

  • 公开/公告号KR970008653A

    专利类型

  • 公开/公告日1997-02-24

    原文格式PDF

  • 申请/专利权人 장진;

    申请/专利号KR19950019335

  • 发明设计人 장진;변재성;전홍빈;

    申请日1995-07-04

  • 分类号H01L29/78;

  • 国家 KR

  • 入库时间 2022-08-22 03:18:16

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