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Self-aligned amorphous silicon thin film transistor using microcrystalline silicon containing chlorine and its manufacturing method
Self-aligned amorphous silicon thin film transistor using microcrystalline silicon containing chlorine and its manufacturing method
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机译:使用含氯微晶硅的自对准非晶硅薄膜晶体管及其制造方法
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摘要
The present invention relates to an amorphous silicon TFT and a method of manufacturing the same, by forming a μc-Si (: Cl) using a mixed gas containing Cl as the ohmic contact layer, the leakage current is small in the backlight irradiation in the TFT-LCD Not only can TFT be made, but also by adjusting the mixing ratio of SiH 2 Cl 2 gas, selective deposition can be achieved, which can reduce the etching process when manufacturing self-aligned TFT, thereby improving process yield and productivity. Fully self-aligned amorphous silicon TFTs with n + μc-Si (: Cl) are particularly suitable for large area TFT-LCD fabrication.
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