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Magnetic field enhanced plasma etch reactor

机译：磁场增强等离子体蚀刻反应器

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A magnetic field enhanced single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting pedestal/cathode (70,72); and a unitary wafer exchange mechanism (74) comprising wafer lift pins (79) which extend through the pedestal and a wafer clamp ring (78). The lift pins and clamp ring are moved vertically by a one-axis lift mechanism (140) to accept the wafer from a co-operating external robot blade (76), clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode (70) and a thermal conductivity-enhancing gas interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (114, 175, 176) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (81,83) of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher wich provides uniformity, directionality and selectivity at high gas pressure, operates cleanly and incorporates in-situ self-cleaning capability.
机译：公开了一种磁场增强的单晶片等离子体蚀刻反应器（60）。反应器的特点包括电控步进磁场，可在高压下提供高速率的均匀蚀刻;温度受控的反应器表面，包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑基座/阴极（70,72）;整体式晶片交换机构（74）包括延伸穿过基座的晶片升降销（79）和晶片夹持环（78）。升降销和夹紧环通过单轴升降机构（140）垂直移动，以从协作的外部机械手刀片（76）接收晶片，将晶片夹紧到基座并将晶片返回到刀片。电极冷却结合了对电极（70）主体的水冷却和晶片与电极之间的提高热导率的气体界面，从而尽管对电极施加了高功率密度，仍可保持晶片表面冷却。气体馈通装置（114、175、176）将冷却气体施加到RF供电电极（72），而不会使气体分解。为诸如夹紧环和气体歧管之类的表面提供了诸如石英之类的材料的保护涂层/层（81，83）。这些特征的结合提供了宽压力范围，高蚀刻速率，高生产量的单晶片蚀刻机，在高气压下提供了均匀性，方向性和选择性，清洁操作并具有原位自清洁功能。

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