首页> 外国专利> FORMATION OF THIN COPPER-INDIUM-SULFUR-SELENIUM FILM AND PRODUCTION OF COPPER-INDIUM-SULFUR-SELENIUM TYPE CHALCOPYRITE CRYSTAL

FORMATION OF THIN COPPER-INDIUM-SULFUR-SELENIUM FILM AND PRODUCTION OF COPPER-INDIUM-SULFUR-SELENIUM TYPE CHALCOPYRITE CRYSTAL

机译:铜-铟-硫-硒薄膜的形成和铜-铟-硫-硒型黄铜矿晶体的生产

摘要

PROBLEM TO BE SOLVED: To make it possible to vary the electrodeposition ratio among elements by subjecting an electrically conductive substrate to electrodeposition treatment in the presence of specified substances. SOLUTION: In order to form the objective thin Cu-In-S-Se film, an electrically conductive substrate is subjected to electrodeposition treatment in the presence of copper sulfate, indium sulfate, selenium dioxide and thiourea. Thiourea is added to an aq. sulfuric acid soln. contg. dissolved copper sulfate, indium sulfate and selenium dioxide, a formed precipitate is removed to prepare a soln. for electrodeposition and the electrically conductive substrate is subjectd to electrodeposition treatment with the soln. When chalcopyrite crystals are produced, an electrically conductive substrate is subjected to electrodeposition treatment in the presence of copper sulfate, indium sulfate, selenium dioxide and thiourea and then heat treatment is carried out. The objective CuIn(S,Sr)2 crystals expected to enhance the efficiency of a solar cell from the viewpoint of a band gap are obtd. without using a vacuum technique.
机译:解决的问题:通过在特定物质的存在下对导电基材进行电沉积处理,可以改变元素之间的电沉积比。解决方案:为了形成客观的Cu-In-S-Se薄膜,在硫酸铜,硫酸铟,二氧化硒和硫脲的存在下,对导电基材进行电沉积处理。将硫脲添加到水溶液中。硫酸溶液。续溶解硫酸铜,硫酸铟和二氧化硒,除去形成的沉淀物以制备溶液。进行电沉积,然后用sol对导电基材进行电沉积处理。当生产黄铜矿晶体时,在硫酸铜,硫酸铟,二氧化硒和硫脲的存在下对导电基材进行电沉积处理,然后进行热处理。从带隙的观点出发,期望得到能够提高太阳能电池的效率的目标CuIn(S,Sr)2晶体。无需使用真空技术。

著录项

  • 公开/公告号JPH0931683A

    专利类型

  • 公开/公告日1997-02-04

    原文格式PDF

  • 申请/专利权人 YAZAKI CORP;

    申请/专利号JP19950190581

  • 申请日1995-07-26

  • 分类号C25D3/56;C30B29/46;

  • 国家 JP

  • 入库时间 2022-08-22 03:33:10

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