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FORMATION OF THIN COPPER-INDIUM-SULFUR-SELENIUM FILM AND PRODUCTION OF COPPER-INDIUM-SULFUR-SELENIUM TYPE CHALCOPYRITE CRYSTAL
FORMATION OF THIN COPPER-INDIUM-SULFUR-SELENIUM FILM AND PRODUCTION OF COPPER-INDIUM-SULFUR-SELENIUM TYPE CHALCOPYRITE CRYSTAL
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机译:铜-铟-硫-硒薄膜的形成和铜-铟-硫-硒型黄铜矿晶体的生产
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摘要
PROBLEM TO BE SOLVED: To make it possible to vary the electrodeposition ratio among elements by subjecting an electrically conductive substrate to electrodeposition treatment in the presence of specified substances. SOLUTION: In order to form the objective thin Cu-In-S-Se film, an electrically conductive substrate is subjected to electrodeposition treatment in the presence of copper sulfate, indium sulfate, selenium dioxide and thiourea. Thiourea is added to an aq. sulfuric acid soln. contg. dissolved copper sulfate, indium sulfate and selenium dioxide, a formed precipitate is removed to prepare a soln. for electrodeposition and the electrically conductive substrate is subjectd to electrodeposition treatment with the soln. When chalcopyrite crystals are produced, an electrically conductive substrate is subjected to electrodeposition treatment in the presence of copper sulfate, indium sulfate, selenium dioxide and thiourea and then heat treatment is carried out. The objective CuIn(S,Sr)2 crystals expected to enhance the efficiency of a solar cell from the viewpoint of a band gap are obtd. without using a vacuum technique.
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