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PRODUCTION OF PHASE-SHIFT PHOTOMASK BLANK, PHASE-SHIFT PHOTOMASK BLANK AND PHASE-SHIFT PHOTOMASK

机译：移相光掩模空白，移相光掩模空白和移相光掩模的生产

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PURPOSE: To provide a phase-shift photomask blank suitable to UV exposure and highly resistant to chemicals. ;CONSTITUTION: Gaseous nitrogen monoxide is added by 2.65-6vol.%, then a molybdenum silicide target is sputtered, and a molybdenum silicide oxynitride film is formed on a transparent substrate. This film is suitable to the phase-shift film in a KrF excimer laser wavelength and highly resistant to chemicals. Since the chemical resistance is especially improved when the proportion of the gaseoous nitrogen monoxide is low, the film is used as the protective film of the phase-shift film by adding 0.5-6vol.%. The process variation of the transmittance is reduced when the film is heat-treated at ≥200°C, and the transmittance is increased in the exposure wavelength.;COPYRIGHT: (C)1996,JPO

机译：目的：提供一种相移光掩模坯料，该坯料适合暴露于紫外线并高度耐化学药品。组成：加入2.65-6vol。％的气态一氧化氮，然后溅射硅化钼靶，并在透明基板上形成硅化钼氧氮化膜。该膜适用于KrF准分子激光波长的相移膜，并且高度耐化学腐蚀。当气态一氧化氮的比例低时，由于特别提高了耐化学性，因此通过添加0.5-6vol。％将该膜用作相移膜的保护膜。当薄膜在≥200°C的温度下进行热处理时，透射率的工艺变化减小，并且透射率在曝光波长处增大。;版权所有：（C）1996，日本特许厅

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公开/公告号JPH0874031A

专利类型
公开/公告日1996-03-19

原文格式PDF
申请/专利权人 ULVAC SEIMAKU KK;MITSUBISHI ELECTRIC CORP;
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申请/专利号JP19940214792
发明设计人 YAMAMOTO TSUNEO;KAWADA MAE;MIYAZAKI JUNJI;HAYASHI ATSUSHI;CHIBA AKIRA;TOKU AKIHIKO;SAITO YOSHIHIRO;YOSHIOKA NOBUYUKI;
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申请日1994-09-08
分类号C23C14/06;C23C14/34;H01L21/027;
国家 JP
入库时间 2022-08-22 03:58:25

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