首页> 外国专利> Recrystallization method to selenization of thin-film Cu(In,Ga)Se. sub.2 for semiconductor device applications

Recrystallization method to selenization of thin-film Cu(In,Ga)Se. sub.2 for semiconductor device applications

机译：再结晶方法使硒化薄膜Cu（In，Ga）Se硒化。 sub.2，用于半导体器件应用

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A process for fabricating slightly Cu-poor thin-films of Cu(In, Ga)Se. sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga) Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550 C.) at which Cu(In,Ga)Se. sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In, Ga), on the substrate at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450 C.) and holding that temperature and the Se overpressure for an annealing period. A nonselenizing, low temperature anneal at about 100 C. can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.

机译：一种制造贫铜的Cu（In，Ga）Se薄膜的工艺。用于半导体器件应用的基板上的sub.2包括以下步骤：首先在基板上以固体形式形成稍富Cu的，相分离的Cu（In，Ga）Se.2：Cu.sub.Se混合物然后将Cu（In，Ga）Se.sub.2：Cu.sub.x Se固体混合物暴露于Se蒸气和（In，Ga）蒸气的超压下以沉积在Cu（In，Ga）Se上2：Cu x Se固体混合物，同时将固体混合物的温度提高至Cu（In，Ga）Se的重结晶温度（约550℃）。 sub.2是固体，而Cuxsub Se是液体。终止（In，Ga）焊剂，同时保持Se超压通量和重结晶温度，以使Cuxsub Se用在温度转变期间沉积的（In，Ga）并与Se蒸气重结晶。贫铜的xx（In，Ga）y Se.sub.z的薄膜可以通过依次沉积或共沉积金属前驱体Cu和（In，Ga）来制备初始富Cu，相分离的Cu（In，Ga）Se.2：Cu.sub.x Se大颗粒混合物），在室温下在基板上，在存在Se超压的情况下将薄膜温度升高至中等的退火温度（约450℃），并将该温度和Se超压保持退火时间。在硒化，中温退火之前，也可以使用约100℃的非硒化，低温退火来均化基板上的前体。

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公开/公告号US5436204A

专利类型
公开/公告日1995-07-25

原文格式PDF
申请/专利权人 MIDWEST RESEARCH INSTITUTE;
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申请/专利号US19940293826
发明设计人 DAVID S. ALBIN;JEFFREY J. CARAPELLA;JOHN R. TUTTLE;MIGUEL A. CONTRERAS;ANDREW M. GABOR;ROMMEL NOUFI;ANDREW L. TENNANT;
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申请日1994-08-22
分类号H01L21/302;
国家 US
入库时间 2022-08-22 04:04:38

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