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A method for the electrical contacting of porous silicon

机译：多孔硅电接触的方法

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摘要

the invention relates to a process for the production of a kontaktelektrode on a siliziumoberflu00e4che, which, on the siliziumoberflu00e4che elektrodenmaterial upset and in this way, the electrode is formed. due to the surface of the porous silicon to nanokristalline have an metallkontakte high contact resistances.it is therefore the responsibility of the invention, a method for the production of such a kontaktelektrode to create the contacting improved and the kontaktwiderstand is reduced. the solution after the formation of the kontaktelektrode silicon to poru00f6sidieren. this gives you a much better electrical contact with the porous silicon.in addition, beneficial manner to prevent the porous silicon between it and the electrode for the liability of the electrode negative oxide surface layer forms, as it occurs when the electrode is applied to a time where the silicon poru00f6sidiert already has been.

机译：本发明涉及一种在硅化硅橡胶上生产kontaktelektrode的方法，该方法在硅化硅橡胶材料上产生毛坯，并由此形成电极。由于多孔硅的表面与纳米kristalline具有高的金属接触电阻。因此，本发明的任务是，制造这种kontaktelektrode以产生接触并减少kontaktwiderstand的方法。 kontaktelektrode硅形成por后的溶液。这样可以使您与多孔硅更好地电接触。此外，一种有益的方法是防止在多孔硅与电极之间形成负电极氧化层表面，这是因为将电极施加到电极上时会发生这种情况。硅已经存在的时间。

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公开/公告号DE4342527A1

专利类型
公开/公告日1995-06-22

原文格式PDF
申请/专利权人 FORSCHUNGSZENTRUM JÜLICH GMBH 52428 JÜLICH DE;
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申请/专利号DE19934342527
发明设计人 MÜNDER HERBERT DR. 50129 BERGHEIM DE;BERGER MICHAEL 53343 WACHTBERG DE;MARSO MICHEL DR. 52428 JÜLICH DE;THÖNISSEN MARKUS 41334 NETTETAL DE;LÜTH HANS PROF. 52076 AACHEN DE;
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申请日1993-12-15
分类号H01L21/60;H01L21/283;
国家 DE
入库时间 2022-08-22 04:09:04

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