The DC and AC electrical characterization of Au/porous silicon contacts in room temperature is presented. The Porous Silicon layers were prepared by electrochemical etching in p-type silicon <100> substrates. The DC resistances were studied and the AC electrical measurements were performed from 5 Hz to 10 MHz, for the four samples at 0V. We found two behaviours typical of the dielectric permittivity property of samples studied; i) the regimen of strong dispersion present at low frequency and ii) the relaxation region that dominates at high frequency. An electrical equivalent circuit was proposed to fit the experimental frequency response of the different samples. We have obtained various model parameter values fitting corresponding Au/PS structures fabricated under different process conditions.
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