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Structure of a tube for growth of GaAs single crystal by V-VIS method or VGF method
Structure of a tube for growth of GaAs single crystal by V-VIS method or VGF method
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机译：用V-VIS法或VGF法生长GaAs单晶的管的结构
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摘要
The present invention relates to a device used for single crystal growth of GaAs, and more particularly to a device for growing a GaAs single crystal by the VB method or VGF by a VB method or a VGF method for preventing Si from flowing into a GaAs single crystal from a quartz reaction tube In order to prevent Si from being introduced into the GaAs single crystal due to the reaction by Ga vapor in the conventional case, GaAs polycrystalline is charged into the PBN crucible and then a plate-like B2O3(BORIC OXIDE) as a method of growing crystals by charging B2O3Was used to block the GaAs solution and the outside air, or the PBN lid was covered on the PBN crucible to suppress the Si introduced from the quartz reaction tube.;However, in the first method, the high purity B2O3It is not easy to purchase this B2O3Is directly contacted with the GaAs solution,2Is introduced into the GaAs solution to generate a bond in the GaAs single crystal, thereby deteriorating the electrical and optical properties of the GaAs single crystal. Even if the PBN lid is used on the PBN crucible in the second method, substantially no complete sealing is possible, There is a problem that the inflow of the SiO gas can not be effectively suppressed.;In view of the above problems, the present invention has been made in view of the fact that SiO gas, which is a direct cause of Si inflow, is a very unstable chemical, and a PBN pipe is installed inside a quartz reaction, And the structure of the tube for GaAs single crystal growth by the VB method or the VGF method in which most of the SiO gas is precipitated at the low temperature portion by allowing the lowest temperature portion to pass through the inside of the reaction tube which is diluted is provided.
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机译：GaAs单晶生长装置技术领域本发明涉及一种用于GaAs单晶生长的装置，尤其涉及一种通过VB法或VGF通过VB法或VGF法生长GaAs单晶以防止Si流入GaAs单晶中的装置。来自石英反应管的晶体为了防止在常规情况下由于Ga蒸气的反应而将Si引入GaAs单晶中，将GaAs多晶装入PBN坩埚中，然后装入板状B 2 O 3 （硼氧化物）作为通过填充用于阻挡GaAs溶液的B 2 O 3 来生长晶体的方法然后用外部空气或PBN盖覆盖在PBN坩埚上，以抑制从石英反应管中引入的Si。但是，在第一种方法中，高纯度B 2 O 3 购买直接与GaAs溶液接触的B 2 O 3 并不容易，将 2 引入到GaAs解决方案在GaAs单晶中产生键，从而使GaAs单晶的电学和光学性能恶化。即使在第二种方法中将PBN盖用在PBN坩埚上，也基本上不可能完全密封，但存在不能有效地抑制SiO气体的流入的问题。考虑到以下事实，作出本发明：SiO气体是非常不稳定的化学物质，是Si流入的直接原因，并且在石英反应内部安装了PBN管，以及用于GaAs单晶生长的管的结构。提供了通过VB法或VGF法，其中通过使最低温度部分通过被稀释的反应管的内部，使大部分SiO气体在低温部分沉淀。
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