首页> 外国专利> X-RAY IMAGINE PLATE, METHOD OF PRODUCING X-RAY IMAGINE PLATE, PHOSPHOR OF PHOTOSTIMULATED LUMINESCENCE MATERIAL amp; METHOD OF PRODUCING PHOSPHOR OF PHOTOSTIMULATED LUMINESCENCE MATERI

X-RAY IMAGINE PLATE, METHOD OF PRODUCING X-RAY IMAGINE PLATE, PHOSPHOR OF PHOTOSTIMULATED LUMINESCENCE MATERIAL amp; METHOD OF PRODUCING PHOSPHOR OF PHOTOSTIMULATED LUMINESCENCE MATERI

机译:X射线成像板,X射线成像板的制造方法,光致发光材料的磷和光致发光材料的磷的制造方法

摘要

Improvements applicable to an X-ray imaging plate, a method for producing an X-ray imaging plate, a phosphor of a photostimulated luminescence material, and a method for producing a phosphor of a photostimulated luminescence material, including (1) a means to employ only one calcination step or to remove a substrate from a sheet of a phosphor to improve the luminescence intensity, (2) a means to add one or more humidity resistant film placed on the ordinary protection film, (3) a means to remove a binder contained in the phosphor by ashing to improve the luminescence intensity, (4) a means to conduct calcination to a semi-product piled by quartz plate to cure a camber of an X-ray imaging plate, (5) a means to employ at least helium as a reducing gas for the purpose to entirely convert tervalent europium contained in the raw material of a phosphor to bivalent europium, resultantly improving the luminescence intensity, and (6) a means to employ a complex compound containing halogenides of alkaline earth metals and a sulfide of an alkaline earth metal, e.g. BaCl2-xBaBr2-yCaS:zEu2+ et al. to increase the luminescence intensity in the wavelength range, 650-850 nm, for the purpose to allow employment of a semiconductor laser as an exciting light.
机译:适用于X射线成像板的改进,X射线成像板的制造方法,光致发光材料的荧光粉和光致发光材料的荧光粉的制造方法,包括(1)采用的手段仅需一个煅烧步骤或从荧光粉片上去除基材以提高发光强度,(2)一种在普通保护膜上添加一层或多层防潮膜的方法,(3)一种去除粘合剂的方法通过灰化以提高发光强度来包含在磷光体中;(4)对由石英板堆积的半成品进行煅烧的方法,以固化X射线成像板的弧度;(5)至少采用一种方法氦作为还原气体,目的是将磷光体原料中所含的三价entirely完全转化为二价euro,从而提高发光强度;(6)采用含卤化物的复合化合物的方法f碱土金属和碱土金属的硫化物,例如BaCl 2 -xBaBr 2 -yCaS:zEu 2+等。为了增加波长在650-850nm范围内的发光强度,以允许使用半导体激光器作为激发光。

著录项

  • 公开/公告号KR1019940007115B1

    专利类型

  • 公开/公告日1994-08-05

    原文格式PDF

  • 申请/专利权人 FUJITSU LTD.;

    申请/专利号KR1019890702062

  • 申请日1989-11-07

  • 分类号G21K4/00;

  • 国家 KR

  • 入库时间 2022-08-22 04:38:27

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