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Ultra-high-speed photoconductive devices using semi-insulating layers
Ultra-high-speed photoconductive devices using semi-insulating layers
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机译:使用半绝缘层的超高速光电导器件
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摘要
An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150 to about 300 C.
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