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Ultra-high-speed photoconductive devices using semi-insulating layers

机译:使用半绝缘层的超高速光电导器件

摘要

An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150 to about 300 C.
机译:描述了一种超高速光电导装置,其包括同质外延半绝缘的III-V层或主体,在其上形成由小间隙隔开的欧姆/导电触点或条带。半绝缘体或层是由MBE通过低温生长III-V化合物制成的。在GaAs实施方案中,该层在砷稳定生长条件下,优选在150至约300℃的衬底温度下生长。

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