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SEMI-INSULATING LAYER AND ULTRA-HIGH-SPEED PHOTOCONDUCTIVE DEVICES MADE THEREFROM

机译：由其制成的半绝缘层和超高速光电导装置

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摘要

A new III-V buffer material is described which is produced by low temperature growth of III-V compounds by MBE that has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconductor devices, such as HEMT's, MESFET's and MISFET's and also for ultra-high-speed photoconductor swicthing devices. In the case of the III-V material, GaAs, the buffer is grown under arsenic stable growth conditions, at a growth rate of 1 micron/hour, and at a substrate temperature preferably in the range of 150 to about 300°C. The new material is crystalline, highly resistive, substantially optically inactive, and can be overgrown with high quality III-V active layers.

机译：描述了一种新的III-V缓冲材料，该材料是MBE通过III-V化合物的低温生长而生产的，该材料具有独特且理想的性能，特别是对于间距很小的亚微米栅长有源III-V半导体器件，例如HEMT，MESFET和MISFET以及超高速光电导体旋转装置。在III-V族材料GaAs的情况下，缓冲液在砷稳定的生长条件下以1微米/小时的生长速率，并且在基板温度优选在150至约300℃的范围内生长。新材料是结晶的，高电阻的，基本上没有光学活性的，并且可以长满高质量的III-V活性层。

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公开/公告号WO8907833A2

专利类型
公开/公告日1989-08-24

原文格式PDF
申请/专利权人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY;
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申请/专利号WO1989US00666
发明设计人 CALAWA ARTHUR R.;SMITH FRANK W.;MANFRA MICHAEL J.;CHEN CHANG-LEE;HOLLIS MARK A.;DIADIUK VICKY;LE HAN O.;
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申请日1989-02-17
分类号H01L21/203;H01L21/314;H01L33/00;
国家 WO
入库时间 2022-08-22 06:35:31

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