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Single-crystal semiconductor growth technique - using Czochralski method with applied magnetic field, provides equalised axial oxygen concn. of crystal blank

机译:单晶半导体生长技术-使用切克劳斯基(Czochralski)方法加上外加磁场,可提供均衡的轴向氧浓度。水晶坯

摘要

The Czochralski crystal growth process is operated in a magnetic field, and a single crystal semiconductor blank is grown from a molten semiconductor material. A device is used which has; a closed chamber (2) with a quartz crucible arrangement (5) surrounded by a graphite container (4), a heating element (6) for heating the crucible, a drive shaft (3) for rotating the crucible at a predetermn. angular velocity, and a crystal pulling device (8) for pulling a seed crystal; a magnetic field generator (7) for directing a magnetic field around the melt. The generator has at least two parts disposed on an outer face of the chamber, opposite each other transverse to the crucible arrangement. The process has the following steps: (1) coating the crucible with a predetermn. amt. of semiconductor material and evacuating the closed chamber; (2) filling the chamber with an inert gas, and then rotating the crucible at a predetermn. velocity via the shaft; (3) heating the rotating crucible to melt the semiconductor material at a temp. above the single crystal growth temp., to give a molten semiconductor material; (4) immersing a seed crystal in the melt and withdrawing it upwards from the melt to grow a semiconductor crystal, with a magnetic field being directed on to the me the magnetic field strength at the melt is reduced in proportion to the crystal growth, in order to equalise the oxygen concn. in the axial direction of the crystal blank, the surface temp. of the melt being maintained at the single crystal growth temp.; and (5) rotating the seed crystal about its vertical path of movement as the axis and pulling the melt upwards to grow a single crystal rod. ADVANTAGE - The method claims to equalise the axial oxygen concn. of the crystal blank at low mfg. cost.
机译:直拉晶体生长过程在磁场中进行,并且从熔融的半导体材料中生长出单晶半导体毛坯。使用具有以下功能的设备:封闭的腔室(2)具有石英坩埚装置(5),该石英坩埚装置(5)被石墨容器(4)围绕,加热元件(6)用于加热坩埚,驱动轴(3)以预定的速度旋转。角速度,以及用于拉晶种的拉晶装置(8)。磁场发生器(7),用于在熔体周围引导磁场。所述发生器具有至少两个部分,所述至少两个部分设置在所述腔室的外表面上,所述部分彼此垂直于所述坩埚布置。该过程包括以下步骤:(1)用预定的方法涂覆坩埚。 amt。用半导体材料抽空密闭腔室; (2)用惰性气体填充腔室,然后以预定的速度旋转坩埚。通过轴的速度; (3)在一定温度下加热旋转的坩埚以熔化半导体材料。高于单晶生长温度,得到熔融的半导体材料; (4)将晶种浸入熔体中并从熔体中向上抽出以生长半导体晶体,同时将磁场指向熔体;为了使氧气浓度均衡,熔体处的磁场强度与晶体生长成比例地降低。在晶体坯的轴向,表面温度。熔融物保持在单晶生长温度。 (5)使籽晶围绕其垂直运动路径作为轴旋转,并向上拉动熔体以生长单晶棒。优点-该方法要求使轴向氧气浓度相等。低mfg的晶体坯料。成本。

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