首页> 外国专利> METHOD OF METAL HYDRIDE FILM APPLYING IN VACUUM, APPLICATION OF METAL HYDRIDE FILM, PRODUCED BY THE METHOD OF ITEM 1, AND APPLICATION OF SUBSTRATUM WITH METAL HYDRIDE FILM, PRODUCED BY THE METHOD OF ITEM 1

METHOD OF METAL HYDRIDE FILM APPLYING IN VACUUM, APPLICATION OF METAL HYDRIDE FILM, PRODUCED BY THE METHOD OF ITEM 1, AND APPLICATION OF SUBSTRATUM WITH METAL HYDRIDE FILM, PRODUCED BY THE METHOD OF ITEM 1

机译:金属氢化物膜在真空中的应用方法,金属氢化物膜的应用(由项目1的方法生产)和金属氢化物膜的基质的应用(由项目1的方法生产)

摘要

the invention u043eu0442u043du043eu0441u0438u0442u0441u00a0 receivable u0433u0438u0434u0440u0438u0440u043eu0432u0430u043du043du044bu0445 u0433u043eu043cu043eu0433u0435u043du043du044bu0445 and stable films of titanium or other metals, containing a large amount of hydrogen u0441u0443u0431u0441u0442u0440 ata, which can be u043fu0440u043eu0432u043eu0434u00a0u0449u0438u043c, u043fu043eu043bu0443u043fu0440u043eu0432u043eu0434u00a0u0449u0438u043c and u0438u0437u043eu043bu00a0u0446u0438u043eu043du043du044bu043c material.the invention discloses a low-temperature plasma process consistent u043eu0441u0430u0436u0434u0435u043du0438u00a0 metal film and its film u043fu0440u0435u0432u0440u0430u0449u0435u043du0438u00a0 hydride a metal u043eu0431u0440u0430u0431u0430u0442u044bu0432u0430u00a0 its hydrogen plasma. using this method on metal, glass or plastics material may be u043eu0441u0430u0436u0434u0435u043du044b u0433u043eu043cu043eu0433u0435u043du043du044bu0435 and stable film u0433u0438u0434u0440u0438u0434u0430 titanium, u043fu0430u043bu043bu0430u0434u0438u00a0, u0432u0430u043du0430u0434u0438u00a0, circus u043eu043du0438u00a0. 2. and 6 z.s - lu, 2 table.
机译:本发明 u043e u0442 u043d u043e u0441 u0438 u0442 u0441 u00a0应收款 u0433 u0438 u0434 u0440 u0438 u0440 u043e u0432 u0432 u0430 u043d u043d u044b u0445 u043e u043c u043e u0433 u0435 u043d u043d u044b u0445和稳定的钛或其他金属膜,其中包含大量的氢 u0441 u0443 u0431 u0441 u0442 u0440 ata,可以是u043f u0440 u043e u0432 u043e u0434 u00a0 u0449 u0438 u043c, u043f u043e u043b u0443 u043f u0440 u043e u0432 u043e u043e u0434 u00a0 u0449 u0438 u043 u0438 u0437 u043e u043b u00a0 u0446 u0438 u043e u043d u043d u044d u043b u043c材料。本发明公开了一种低温等离子体工艺一致的 u043e u0441 u0430 u0436 u0434 u0434 u0435 u043d u043d u0438 u00a0金属膜及其膜 u043f u0440 u0435 u0432 u0440 u0430 u0449 u0435 u043d u0438 u00a0氢化金属 u043e u0431 u0440 u0430 u04330 u0431 u0430 u0442 u044b u0432 u0430 u00a0其氢等离子体。在金属,玻璃或塑料材料上使用此方法可能是 u043e u0441 u0430 u0436 u0434 u0435 u043d u043d u044b u0433 u043e u043c u043c u043e u0433 u0435 u043d u043d u043d u044b u0435薄膜 u0433 u0438 u0434 u0440 u0438 u0434 u0430钛, u043f u0430 u043b u043b u0430 u0434 u0438 u00a0, u0432 u0430 u043d u0430 u0434 u0438 u00a0 u043e u043d u0438 u00a0。 2.和6 z.s-lu,2表。

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