首页> 外国专利> METHOD OF METAL HYDRIDE FILM APPLYING IN VACUUM, APPLICATION OF METAL HYDRIDE FILM, PRODUCED BY THE METHOD OF ITEM 1, AND APPLICATION OF SUBSTRATUM WITH METAL HYDRIDE FILM, PRODUCED BY THE METHOD OF ITEM 1

METHOD OF METAL HYDRIDE FILM APPLYING IN VACUUM, APPLICATION OF METAL HYDRIDE FILM, PRODUCED BY THE METHOD OF ITEM 1, AND APPLICATION OF SUBSTRATUM WITH METAL HYDRIDE FILM, PRODUCED BY THE METHOD OF ITEM 1

机译：金属氢化物膜在真空中的应用方法，金属氢化物膜的应用（由项目1的方法生产）和金属氢化物膜的基质的应用（由项目1的方法生产）

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摘要

A low-temperature process is disclosed, according to which a metal film is deposited by sputtering, and is then turned into a metal hydride film by means of a cold hydrogen plasma. By means of this method, homogenoues and stable films of titanium hydride or of hydrides of other metals can be deposited on metal, glass and plastic materials.

机译：公开了一种低温工艺，根据该工艺，通过溅射沉积金属膜，然后通过冷氢等离子体将其转变为金属氢化物膜。通过这种方法，氢化钛或其他金属的氢化物的均质和稳定的膜可以沉积在金属，玻璃和塑料材料上。

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公开/公告号RU1836487C

专利类型
公开/公告日1993-08-23

原文格式PDF
申请/专利权人 ENIRICHERKE S.P.A;
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申请/专利号SU19914894693
发明设计人 DZHANFRANKO BOKKALON;DZHOVANNI GRILLO;VITTORIO VITTORI;
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申请日1991-02-15
分类号C23C14/00;
国家 RU
入库时间 2022-08-22 05:03:20

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