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Method of gettering heavy-metal impurities from silicon substrates by laser-assisted intrinsic gettering
Method of gettering heavy-metal impurities from silicon substrates by laser-assisted intrinsic gettering
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机译：通过激光辅助本征吸气从硅基板吸除重金属杂质的方法
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摘要
A method of gettering heavy metal impurities from p-type silicon substrates comprises the prior step of forming an intrinsic gettering layer covered with a surface denuded zone in the silicon substrate by subjecting the substrate to heat treatments which form the intrinsic gettering layer having a large density of crystal microdefects compared to the density of crystal microdefects in the denuded zone; then the step of performing most of the required wafer processes other than the step of forming a metal layer; and subsequently the gettering step of heating the silicon substrate to a predetermined temperature and simultaneously irradiating the substrate with light rays, the predetermined temperature being selected to be within the temperature range 150° C. to 220. degree. C., preferably around 200° C.
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