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Field grading extension for enhancement of blocking voltage capability of high voltage thyristor
Field grading extension for enhancement of blocking voltage capability of high voltage thyristor
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机译：场分级扩展，以增强高压晶闸管的阻断电压能力
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摘要
The present invention pertains to a semiconductor device. The semiconductor device includes a semiconductor body. The semiconductor body has a first major surface and an opposing second major surface. The semiconductor device also is comprised of a field grading extension. The field grading extension contacts the first major surface of the semiconductor body and extends beyond the edge of the first major surface of the semiconductor body. The field grading extension is capable of decreasing electric field strength at the edge of the first major surface. The field grading extension is made of an electrically conductive material or a semiconducting material. There is also a cathode conductive layer and an anode conductive layer contacting the first and second major surfaces, respectively, of the semiconductor body. The semiconductor body can include a thyristor. The thyristor has a cathode emitter region and a cathode base region disposed adjacent the first major surface of the semiconductor body. The thyristor also has an anode emitter region and an anode base region disposed adjacent the second opposed major surface of the semiconductor body.
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