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TAILORING OF VIA-HOLE SIDEWALL SLOPE IN AN INSULATING LAYER
TAILORING OF VIA-HOLE SIDEWALL SLOPE IN AN INSULATING LAYER
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机译:绝缘层中的全孔边坡尾矿
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摘要
A method of selectively tailoring the slope of via hole sidewalls. A first polyimide layer (in which the vias are to be formed) is covered by a strippable layer, and the two layers are isotropically etched. By varying the thickness of the strippable layer with respect to that of the polyimide layer, the slope of the via hole sidewalls can be controlled.
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