首页> 外国专利> TAILORING OF VIA-HOLE SIDEWALL SLOPE IN AN INSULATING LAYER

TAILORING OF VIA-HOLE SIDEWALL SLOPE IN AN INSULATING LAYER

机译:绝缘层中的全孔边坡尾矿

摘要

A method of selectively tailoring the slope of via hole sidewalls. A first polyimide layer (in which the vias are to be formed) is covered by a strippable layer, and the two layers are isotropically etched. By varying the thickness of the strippable layer with respect to that of the polyimide layer, the slope of the via hole sidewalls can be controlled.
机译:一种选择性地调整通孔侧壁的斜率的方法。第一聚酰亚胺层(将在其中形成通孔)被可剥离层覆盖,并且各向同性地蚀刻这两层。通过相对于聚酰亚胺层改变可剥离层的厚度,可以控制通孔侧壁的斜率。

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