首页> 外国专利> CONSTRUCTION WHEREIN SEPARATED HIGH PERFORMANCE POWER VDMOS TRANSISTOR AND HIGH VOLTAGE P-TYPE CHANNEL MOS TRANSISTOR ARE INTEGRATED MONOLITHICLY WITH CMOS, NPN AND PNP TRANSISTORS AND DIODE WITH LITTLE LEAKAGE

CONSTRUCTION WHEREIN SEPARATED HIGH PERFORMANCE POWER VDMOS TRANSISTOR AND HIGH VOLTAGE P-TYPE CHANNEL MOS TRANSISTOR ARE INTEGRATED MONOLITHICLY WITH CMOS, NPN AND PNP TRANSISTORS AND DIODE WITH LITTLE LEAKAGE

机译：隔离的高性能VDMOS晶体管和高压P型沟道MOS晶体管的结构均与CMOS，NPN和PNP晶体管以及二极管进行小泄漏集成

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摘要

Isolated from one another N-channel, VDMOS power transistors having a self-aligned and shielded structure and being suitable for high operating voltages and high currents, are monolithically integrated together with drive, P-channel MOS transistors having a drain extension region for tolerating reverse voltages higher than the breakdown voltage of the VDMOS power transistors, and together with CMOS transistors, vertical and lateral NPN transistors, PNP transistors and low leakage diodes for implementing self-contained control systems capable of being driven by logic level signals. The integration is accomplished with a minimum alteration of a known VDMOS transistor's fabrication process.

机译：具有自对准和屏蔽结构且适用于高工作电压和大电流的N沟道VDMOS功率晶体管与彼此隔离，与具有漏极扩展区以容忍反向的驱动P沟道MOS晶体管整体集成高于VDMOS功率晶体管击穿电压的电压，以及CMOS晶体管，垂直和横向NPN晶体管，PNP晶体管和低泄漏二极管，用于实现能够由逻辑电平信号驱动的独立控制系统。通过最小程度地改变已知VDMOS晶体管的制造工艺即可完成集成。

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公开/公告号JPS63296367A

专利类型
公开/公告日1988-12-02

原文格式PDF
申请/专利权人 SGS MICROELETTRONICA SPA;
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申请/专利号JP19870284097
发明设计人 KURAUDEIO KONTEIIRO;PAORA GARUBIATEI;ANTONIO ANDOREINI;
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申请日1987-11-10
分类号H01L21/331;H01L21/76;H01L21/8222;H01L21/8234;H01L21/8248;H01L21/8249;H01L27/06;H01L27/088;H01L27/092;H01L29/73;H01L29/732;H01L29/78;
国家 JP
入库时间 2022-08-22 06:42:23

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