Method for superficial annealing of semiconductor materials using pulsed micro-wave energy

• 1. 用于对半导体材料的层进行退火的设备、对半导体材料的层进行退火的方法以及平板显示器 [P] . 中国专利： CN109643644A . 2019-04-16
• 2. 利用高密度低能量等离子体进行的对半导体表面的界面处理 [P] . 中国专利： CN105593972B . 2018.08.07
• 3. Annealing of uncapped compound semiconductor materials by pulsed energy deposition [P] . 美国专利： US4154625A . 1979-05-15

  机译： 通过脉冲能量沉积对未封端的化合物半导体材料进行退火

• 4. Process for the surface-annealing of semi-conductor materials by pulsed microwave energy [P] . 欧洲知识产权局专利： EP0076769A1 . 1983-04-13

  机译： 脉冲微波能量对半导体材料进行表面退火的方法

• 5. MICROWAVE ENERGY SURFACE RECLAIMING METHOD PULSED OF SEMICONDUCTOR MATERIALS [P] . 法国专利： FR2513659A1 . 1983-04-01

  机译： 半导体材料的微波能表面恢复方法

• 1. Simulated Annealing for Ground State Energy of Ionized Donor Bound Excitons in Semiconductors [J] . YAN Hai-Qing, TANG Chen, LIU Ming, 理论物理通讯（英文版） . 2004,第011期
• 2. Simulated Annealing for Ground State Energy of Ionized Donor Bound Excitons in Semiconductors [J] . YANHai-Qing, TANGChen, LIUMing, 理论物理通讯：英文版 . 2004,第005期
• 3. Optimization of Pulse Laser Annealing to Increase Sharpness of Implanted-junction Rectifier in Semiconductor Heterostructure [J] . E.L.Pankratov 纳微快报：英文版 . 2010,第004期
• 4. High Energy Light Ion (HELI) Irradiation: Is it a novel method for material modification and defect engineering in semiconductors? [C] . D. Kabiraj, Subhasis Ghosh International Workshop on the Physics of Semiconductor Devices . 2007
• 5. Cryogenic Irradiation and Low Temperature Annealing of Semiconductor and Optical Materials [D] . Reinke, Benjamin Tyler. 2016
• 6. Theoretical Study of the Charge Transfer Exciton BindingEnergy in Semiconductor Materials for Polymer:Fullerene-Based BulkHeterojunction Solar Cells [O] . MariaA. Izquierdo, Ria Broer, Remco W. A. Havenith, -1
• 7. Cargo and Container X-Ray Inspection with Intra-Pulse Multi-Energy Method for Material Discrimination [O] . Saverskiy Aleksandr Y., Dinca Dan-Cristian, Rommel J. Martin 2015
• 8. Energy Pulse Modification of Semiconductors and Related Materials. Vol. 1 [R] . Hennig, K. 1985

• 1. Influences of laser energy density and annealing on structure properties of AlN films prepared by pulsed laser deposition [J] . Lu Lei ,LIQing-shan ,LiLi . 光电子快报：英文版 . 2007,第4期
• 2. Applications of Secondary Electron Composition Contrast Imaging Method in Microstructure Studies on Heterojunction Semiconductor Devices and Multilayer Materials [J] . 刘安生 ,邵贝羚 ,安生 . 稀有金属：英文版 . 1999,第2期
• 3. 一种对半导体光放大器的放大信号脉冲进行压缩整形的新方案 [C] . 吴建伟 . 江苏省通信学会学术年会 . 2004
• 4. 高功率超宽带微波脉冲对半导体器件损伤的实验研究 [A] . 张悦 . 2005