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Process for depositing dielectric films in a plasma glow discharge
Process for depositing dielectric films in a plasma glow discharge
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机译：在等离子体辉光放电中沉积介电膜的方法
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摘要
In a process for forming dense and tightly adhering phosphorus or boron or phosphorus/boron-doped silicon oxide films, on the surface of conductors, semiconductors, and insulators, an inert gas, or a gaseous oxygen-containing or nitrogen containing compound is introduced into a plasma reaction chamber at a point 44 upstream of the point 36 where silane gas diluted with inert gas and the dopant gas also diluted with inert gas are introduced to the chamber, and an RF field applied to generate a plasma. Uniform deposition with negligible inclusions of foreign matter is achieved. IMAGE
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