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Brief description of embodiments of a mos type transistor and transistor produced according to this
Brief description of embodiments of a mos type transistor and transistor produced according to this
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机译:mos型晶体管的实施例的简要描述以及根据该实施例生产的晶体管
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P the invention relates to the field of the field effect transistors of the isolated grid of n channel mos type / p & & p & the method of manufacture of these transistors, which comprise, on a substrate semiconductor - conductor, a control gate 14 and source regions 12, 13 and a drain channel 15, 16, comprises a step feature of the creation of these three regions by simultaneous diffusion of impurities from sources 20 of polycrystalline silicon doped of the two types of impurities, these sources are then stored in order to constitute the electrodes of the contact regions created with the exterior connectors 50. p / p applications are those of the monolithic integrated circuits with a high integration density. / p
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