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Brief description of embodiments of a mos type transistor and transistor produced according to this

机译:mos型晶体管的实施例的简要描述以及根据该实施例生产的晶体管

摘要

P the invention relates to the field of the field effect transistors of the isolated grid of n channel mos type / p & & p & the method of manufacture of these transistors, which comprise, on a substrate semiconductor - conductor, a control gate 14 and source regions 12, 13 and a drain channel 15, 16, comprises a step feature of the creation of these three regions by simultaneous diffusion of impurities from sources 20 of polycrystalline silicon doped of the two types of impurities, these sources are then stored in order to constitute the electrodes of the contact regions created with the exterior connectors 50. p / p applications are those of the monolithic integrated circuits with a high integration density. / p
机译:本发明涉及n沟道mos型隔离栅的场效应晶体管的领域。 & &这些晶体管的制造方法包括在衬底半导体导体上,控制栅极14和源极区域12、13以及漏极沟道15、16的步骤,该步骤特征在于通过同时扩散来创建这三个区域来自掺杂了两种类型杂质的多晶硅源20的杂质,然后将这些源存储起来,以构成用外部连接器50创建的接触区域的电极。具有高集成度的单片集成电路。

著录项

  • 公开/公告号FR2417853B1

    专利类型

  • 公开/公告日1982-11-26

    原文格式PDF

  • 申请/专利权人 THOMSON CSF;

    申请/专利号FR19780004528

  • 发明设计人

    申请日1978-02-17

  • 分类号H01L21/48;H01L29/78;

  • 国家 FR

  • 入库时间 2022-08-22 10:02:04

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