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Monocrystalline semiconductor epitaxial films - are grown on water soluble salt layer on substrate and sepd. by dissolving salt
Monocrystalline semiconductor epitaxial films - are grown on water soluble salt layer on substrate and sepd. by dissolving salt
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机译：单晶半导体外延膜-在衬底和sepd的水溶性盐层上生长。通过溶解盐
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摘要
The films are prepd. by (a) epitaxially growing at least one layer (32) of water-soluble salt on a substrate (6), (b) epitaxially growing a monocrystalline semiconductor layer (36) on the salt and (c) dissolving the salt layer with water, sepg. the semiconductor layer from the substrate. In embodiments, a monocrystalline semiconductor of another type is epitaxially grown on the first semiconductor; electrical contacts (38) are evapd. on the semiconductor layer; an antireflecting coating (40) is evapd. on the semiconductor layer; all before the dissolvable layer is dissolved. A number of epitaxial layers are opt. grown oN a common substrate, each sepd. from it by a layer of dissolvable material which are dissolved simultaneously to produce a number of semiconductor films. The method is esp. useful for Si or Ge films for photovoltaic solar cells and ICs. It is suitable for automated mass prodn., uses less energy than the Czolchralski processes and allows good control of thickness and doping.
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