首页>
外国专利>
DEVELOPING METHOD FOR POSITIVE TYPE RADIATION RESIST
DEVELOPING METHOD FOR POSITIVE TYPE RADIATION RESIST
展开▼
机译：正型辐射电阻的研制方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE:To develop a radiation resist made of homopolymer of 2,2,2-trichloroethyl methacrylate or copolymer of the monomer and alkyl methacrylate with high sensitivity and resolution by using a specified developer. CONSTITUTION:2,2,2-Trichloroethyl methacrylate and alkyl methacrylate are (co) polymerized in 10:0-10:4 ratio, and the resulting (co)polymer having 50,000-5 million wt. average mol.wt. and 1.2-5.0mol.wt. dispersion (wt. average mol.wt./ no. average mol.wt.) is dissolved in a solvent such as toluene. This soln. is applied to a substrate, prebaked at about 200 deg.C, and exposed through a pattern. Development is then carried out with a soln. of 2-alkoxy ethanol such as CH3OCH2CH2OH contg. 0.10-2.00wt% water as a developer at 10-35 deg.C for 2-20min. Thus, a positive pattern causing less reduction in the film thickness and having superior sensitivity and resolving power is obtd.
展开▼
机译：用途：通过使用指定的显影剂，以高灵敏度和分辨率开发由甲基丙烯酸2,2,2-三氯乙基酯的均聚物或单体与甲基丙烯酸烷基酯的共聚物制成的防辐射涂层。组成：甲基丙烯酸2,2,2-三氯乙基酯和甲基丙烯酸烷基酯以10：0-10：4的比例（共）聚合，所得的（共）聚合物具有50,000-5,000,000 wt。％。平均分子量和1.2-5.0mol.wt。将分散体（wt。平均mol.wt./no。平均mol.wt.）溶解在溶剂例如甲苯中。这个Soln。将其涂覆到基底上，在约200℃下预烘烤，并通过图案曝光。然后用锡进行显影。 2-烷氧基乙醇，例如CH 3 OCH 2 CH 2 OH续。在10-35摄氏度下将0.10-2.00wt％的水作为显影剂使用2-20分钟。因此，不能得到导致膜厚减少少且灵敏度和分辨力优异的正图案。
展开▼
