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Process for fabrication of semiconductors utilizing selectively etchable diffusion sources in combination with melt-flow techniques
Process for fabrication of semiconductors utilizing selectively etchable diffusion sources in combination with melt-flow techniques
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机译：利用可选择性蚀刻的扩散源结合熔体流动技术制造半导体的方法
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摘要
A process for fabrication of semiconductor devices comprising the steps of depositing over the surface of a semiconductor wafer a first insulating layer containing impurities which are to be diffused into the wafer so as to form source and drain regions, depositing a second insulating and melt-flow layer which is softened or melted at low temperatures, opening contact windows, forming a third insulating layer which also contains impurities to be diffused into the wafer so as to form source drain regions, subjecting the wafer to a heat treatment so as to cause melt-flow and form source and drain regions by the diffusion and removing the third insulating layer. LSI circuits with a high source- drain breakdown voltage may be fabricated at high yields.
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