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Schottky FET on semiconductor substrate - has specified gate width attained experimentally from model whose measuring permits calculation of characteristic coefft.
Schottky FET on semiconductor substrate - has specified gate width attained experimentally from model whose measuring permits calculation of characteristic coefft.
The field-effect transistor has a Schottky gate electrode between source and drain. The gate width (W) satisfies a specified relation which contains a coefficient alpha characteristic for the geometry and material of the device, and is experimentally determined by making a model of a Schottky field-effect transistor with the specified geometry and specified doping. Then the field-effect transistor maximum stable gain esp. for different test frequencies is measured, and the theoretical value for the test frequency is calculated. The coefficient alpha is calculated from a specified equation. When using gallium arsenide or semiconductor material, the gate width value is satisfies a specified term.
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