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Semiconductor matrix of photoemitter elements prodn. - by ion implantation of zinc in gallium arsenide structure and diffusion tempering
Semiconductor matrix of photoemitter elements prodn. - by ion implantation of zinc in gallium arsenide structure and diffusion tempering
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机译：光电发射元件的半导体矩阵-通过离子注入砷化镓结构中的锌并进行扩散回火
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摘要
In the prodn. of a semiconductor matrix of photoemitter elements based on an epitaxial structure of a p+ - GaAs substrate with cons4cutive p-Ga1-xAlxAs- and n-Ga1-yAly-As- layers forming a photoemitting pn-junction, by producing a mask in the n-layer, introducing an acceptor through the former into the n-layer and diffusion tempering for a time and at a temp. sufficient to produce p-zones in the n layer having an penetration depth at least equal to the thickness of the n-layer, the mask is produced by applying a photoresist coating to the n-layer, followed by exposure and etching, and the acceptor is introduced by ion implantation and, before diffusion tempering, the photoresist coating is removed and a SiO2 coating is applied to the n-layer. The process extends the useful range of the matrix and is also more economical. It is not necessary to use a dielectric Al2O3 coating, introduction of Zn and diffusion tempering in an ampoule. Photoemitter elements with linear dimensions of under 70-100 mu m can be produced.
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