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Sn-Doped group III(a)-v(a) Ga-containing layers grown by molecular beam epitaxy
Sn-Doped group III(a)-v(a) Ga-containing layers grown by molecular beam epitaxy
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机译：通过分子束外延生长的Sn掺杂的III（a）-v（a）含Ga层
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摘要
In order to insure that the doping profiles of Sn-doped Group III(a)- V(a) Ga-containing layers grown by molecular beam epitaxy follow relatively closely the time-intensity profile of the dopant beam, the substrate temperature should not exceed about 550°C.
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